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Abstract:
Research conducted under AFOSR grant no. F49620-97-l-026l focused on exploring the properties of microdischarge devices fabricated in silicon. Cylindrical devices having diameters between 20 micrometers and 400 micrometers have been fabricated and intense emission on the B --> X transition of xenon monoiodide (XeI) in the ultraviolet (UV) is produced when mixtures of Xe/I2 are introduced to the discharge. Having specific power loadings beyond 100 kW-/cu cm on a continuous basis, these devices represent a new realm of discharge operation and are attractive candidates as lamps or for the decomposition of environmentally hazardous gases.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. May-Oct 97 |
| Pages: |
7 |
| Report Date: |
FEB 1998 |
| Contract Number: |
F49620-97-1-0261 |
| Report Number: |
A581933 |
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