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Abstract:
A pulsed Nd: Glass laser facility that was developed at Defence Research Establishment Ottawa, for the simulation of single event upsets (SEUs) in electronics, is described in detail. The performance of the laser system, the associated instrumentation and data acquisition systems were extensively characterized during the process of studying the charge collected in a silicon p-i-n photodiode, due to laser and ion-induced SEU. Laser simulation of SEUs is demonstrated to be an accurate and convenient complementary method to ion accelerator-based SEU experimentation. (MM)
| Description: |
DREO rept. |
| Pages: |
44 |
| Report Date: |
NOV 94 |
| Report Number: |
A570092 |
Report Unavailable |
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