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Abstract:
A new type of infrared detector is designed and experimentally demonstrated, which uses unipolar barriers in the detector's epitaxial structure to block dark currents, while passing photocurrent. Varieties of these new detectors include nBn detectors and unipolar barrier photodiodes. In comparison to conventional photodiodes, dark current suppression by at least six orders of magnitude is demonstrated in both nBn and unipolar barrier photodiodes. The concepts are demonstrated in lnAs-based materials, but are more generally applicable in other IR materials such as strained layer superlattice and HgCdTe.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 1 Jan 2008-31 Dec 2010 |
| Pages: |
5 |
| Report Date: |
03 Feb 2012 |
| Contract Number: |
FA9550-08-1-0109 |
| Report Number: |
A507365 |
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Keywords relating to this report:
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