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Materials SciencesCrystallography

Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices

Authors: Pierre M. Petroff; CALIFORNIA UNIV SANTA BARBARA DEPT OF MATERIALS
Abstract:
This research was focused on four topics that are aimed at a better understanding of the physics and structural properties of quantum dots. The authors have demonstrated that the positioning and ordering of self-assembled InAs/GaAs quantum dots (QDs) are possible using a localized strain engineering of the growth surface. Using micro-photoluminescence (Micro-PL) they have demonstrated a novel way of generating charged exciton states in QDs. A detailed understanding of the recombination processes involved with the various charged states excitons states was obtained. Using QDs in microdisk, they have demonstrated single heralded photon emission from a self-assembled QD. By temperature tuning, they are able to shift the 1X exciton QD exciton into resonance with a whispering gallery mode of a microdisk and achieve turnstile of the coupled cavity-quantum dot system. The authors have shown that a QD is not only a source of correlated monochromatic photons, but it also is a source of multicolor photons with excitation-power-dependent correlation properties. This research on GaN QDs was aimed at developing the optimal growth conditions in the AlN/GaN system using molecular beam epitaxy (MBE). Optical spectroscopy of quantum dot ensembles was carried out and structures were developed to probe single GaN QDs using micro-photoluminescence. A list of 58 publications dated July 2000 to June 2003, 3 works in press, 12 oral presentations, 15 conference papers dated 2000-2003, and 4 patents is included as well as a cumulative list of 61 publications from July 2000 on. (5 figures)

Limitations: APPROVED FOR PUBLIC RELEASE
Description: Final rept. 2000-2003
Pages: 30
Report Date: 2003
Contract Number: DAAD19-99-1-0372
Report Number: A452924
Keywords relating to this report:
ALUMINUM NITRIDES
EMISSION SPECTRA
EXCITATION
EXCITONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ARSENIDES
LASER PUMPING
LITHOGRAPHY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
ROOM TEMPERATURE
SEMICONDUCTOR DEVICES
SPECTROSCOPY
STRAIN(MECHANICS)
STRUCTURAL PROPERTIES
SUBSTRATES
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