In this DURIP project, the Department of Electrical Engineering and Computer Science and the Microsystems Technology Laboratories (MTL) of the Massachusetts Institute of Technology (MIT) requested funds to purchase equipment for advanced RF and microwave device research. The proposed instrumentation enables crucial improvements in our measurement capability through the implementation of a temperature-controlled pulsed-IV measurement system. This system includes: 1. A cryogenic probe station to allow on-wafer temperature-controlled DC and RF measurements of electronic devices from 4.2 K to 475 K ($153,715). 2. A dynamic I-V analyzer to characterize transistors and other electronic devices under pulsed, large signal and high power conditions ($120,600). In this report, we will present the main outcomes of this DURIP project. As it will be shown, the system purchase through this project has significantly improved our capability to measure advanced electronic devices and to understand their operation.