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Abstract:
The objective of this program is to develop InP-based monolithically integrated transmitters, including internal (current) and external modulation. The basic issues involved in such integration and operation of the individual devices will be explored both theoretically and experimentally. Thus, intrinsic and extrinsic factors that limit internal and external modulation, propagation and scattering of light in guided structures and through mirrors, and circuits, materials and lithography issues to develop high-frequency (>30 GHz) transmitters will be explored. Integrated chips with driver circuits and guided wave elements will be developed and tested. At the same time we are also developing novel top- and edge-emitting microcavity laser structures in which zero or very low threshold currents are expected due to phonon confinement. Preliminary results, both theoretical and experimental, are very encouraging, and we envisage that these low threshold, high frequency devices will be extremely useful for chip-to-chip and array-based optical interconnects.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Annual progress rept. 1 Oct 2000-30 Sep 2001 |
| Pages: |
9 |
| Report Date: |
11 OCT 2001 |
| Contract Number: |
N00014-96-1-0024 |
| Report Number: |
A292593 |
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Keywords relating to this report:
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