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Abstract:
Temperature dependence of photoluminescence (PL) spectra of MBE grown ZnSe/CdSe/ZnSe QWs with 0.3-1.5 ML nominal CdSe thicknesses as well as MOCVD grown double heterostructures (DHS) GaN/InGaN/GaN with In content in the range 0.004-0.06 within the temperature interval 2-300 K has been studied. Much in common has been found in the PL band temperature behavior for both systems. Depending on the concentration of the solid solution the PL band maximum position epsilon (photoluminescence(max)( T) follows either "normal" or "anomalous" (known as "S-shape") dependence. We consider both dependances in detail and argue that anomalous behavior is caused by the fractal-like structure of the islands.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Conference proceedings |
| Pages: |
4 |
| Report Date: |
JUN 2001 |
| Report Number: |
P292310 |
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