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AviationV/STOL

Modification of Spontaneous Emission and Applications to Semiconductor Lasers

Authors: UNIVERSITY COLL LONDON (UNITED KINGDOM)
 
Abstract: In an earlier report, we have shown for the first time how that zero lasing threshold is achieved between a pair of mirrors spaced at a distance of a half a wavelength of the lasing radiation mod, while spontaneous emission is only partially suppressed. However, the residual spontaneous emission must be taken into account when considering laser characteristics other than the threshold pumping rate, for example, laser linewidth. The present report is concerned with a quantum mechanical model of the laser under conditions of suppressed spontaneous emission. For almost fully inhibited spontaneous emission, the accepted laser models are not applicable, since they are based on a statistical approach valid when a large number of modes participate in the spontaneous emission loss. For a partial suppression of spontaneous emission, the model is applicable, mainly with modification of the atomic decay rate. It is found that when zero threshold is obtained between mirrors as mentioned above, the laser linewidth is reduced only by a modest factor of a quarter.

Limitations: APPROVED FOR PUBLIC RELEASE
Description: Final rept.
Pages: 12
Report Date: FEB 94
Contract Number: SPC-93-4064
Report Number: A244423
Keywords relating to this report:
*QUANTUM THEORY
*SEMICONDUCTOR LASERS
ATOMIC ENERGY LEVELS
ELECTROMAGNETIC FIELDS
EMISSION
EMISSION SPECTRA
EQUATIONS OF MOTION
HAMILTONIAN FUNCTIONS
LASER BEAMS
LASER CAVITIES
LASER PUMPING
MODE LOCKED LASERS
SPECTRAL LINES
SPIN STATES
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