Abstract: Our research project that was supported by the Army Research Office sought to develop improved metal-organic film growth precursors for Pb- and Ba-containing materials, lanthanide-containing materials, and semiconductors that contain small clusters of magnetic elements within the semiconductor matrix. These materials encompass a broad range of military and civilian applications, and their successful development will literally change the way we live. More broadly, we sought to develop chemical insight into precursor structures that allowed maximum volatility to be obtained for a desired element-containing molecule, while also matching the growth chemistry of the precursor to that of the desired material. This report describes progress that was made during the project in our precursor development efforts as well as the use of our new precursors in the growth of thin film materials. Specific objectives included: (1) synthesis of volatile precursors to PbxBa1-xTiO3, which should allow the growth of films by MOCVD and of sub-micron sized three-dimensional structures through laser-assisted CVD growth; (2) synthesis of volatile polymetallic Cr, Mn, and other magnetic element precursors that can be used to dope semiconductors with multimetallic magnetic nanoscale structures. Such multimetallic magnetic sites are thought to be responsible for the high magnetic ordering temperatures that have been observed in many magnetic semiconductors such as GaN:Mn; and (3) development of improved volatile lanthanide complexes to be used in the doping of semiconductors.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 1 Aug 2004-31 Jan 2008 |
| Pages: |
11 |
| Report Date: |
22-Aug-2008 |
| Contract Number: |
W911 NF-04-1-0332 W911NF041033 |
| Report Number: |
A228994 |
|
|
|
|
Keywords relating to this report:
