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Abstract:
Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Pages: |
6 |
| Report Date: |
NOV 2001 |
| Report Number: |
P191210 |
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