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Abstract:
We have developed GaAs-based resonant tunneling diodes (RTDs) based on second quantum well level tunneling that achieve 200 kA/cm2 with 1.2 V peak voltage. We have shown that these results are reproducible by exploring a parameter space of quantum-well widths and barrier heights for this structure. A picosecond sampling oscilloscope was also developed. With a low-cost high- stability time-base and a 100 GHz sampling aperture created by the nonlinear transmission line driver, we have created a test vehicle that can be used for evaluating future RTD-circuit developments.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 20 Sep 96-19 Sep 98 |
| Pages: |
125 |
| Report Date: |
28 DEC 1998 |
| Contract Number: |
F49620-96-C-0052 |
| Report Number: |
A150063 |
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