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Physics and AstronomyElectricity and Magnetism

Isotope Generated Electron Density in Silicon Carbide Direct Energy Converters

Authors: Mark Litz; Kara Blaine; ARMY RESEARCH LAB ADELPHI MD
 
Abstract: SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta (average 125 keV) generates on the order of 27k free electrons/cc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device.

Limitations: APPROVED FOR PUBLIC RELEASE
Pages: 22
Report Date: OCT 2006
Report Number: A123854
Keywords relating to this report:
*ELECTRON DENSITY
*ISOTOPES
*NUCLEAR SCATTERING
*SILICON CARBIDES
*SOLID STATE ELECTRONICS
CIRCUITS
CODING
MODELS
SCHOTTKY BARRIER DEVICES
SIMULATION
STRONTIUM
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