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Materials SciencesCrystallography

Ge-GaAs Superlattices by Molecular Beam Epitaxy

Authors: Chin-An Chang; Armin Segmuller; L. L. Chang; L. Esaki; IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
Abstract: Ge-GaAs Superlattices by Molecular Beam Epitaxy

Pages: 4
Report Date: 28 JAN 1981
Contract Number: DAAG29-78-C-0007
Report Number: A065301

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Keywords relating to this report:
*EPITAXIAL GROWTH
*HETEROJUNCTIONS
GALLIUM ARSENIDES
GERMANIUM
MOLECULAR BEAMS
REPRINTS
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