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Abstract:
This report reviews the accomplishments of a research program that sought to develop a totally new material for high-power transistor switching. The material, which we have generally referred to as SME for semiconductor-metal eutectic, is a composite with a high density of aligned, micron-sized metallic rods embedded in a matrix of a semiconductor. This material differs dramatically from silicon, the material used to fabricate almost all other conventional high- power transistors. Silicon is a single-phase pure material. Devices are fabricated from this material through the use of thin film techniques to incorporate junctions in the surface which enable switching. The composite material contains internal junctions throughout the bulk of the material. Further, it consists of a two-phase equilibrium structure, which because of concerns for defects in the semiconductor, has never before been demonstrated to be of electronic quality, that is, suitable for the fabrication of high-quality devices like high-voltage transistors.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. |
| Pages: |
110 |
| Report Date: |
92 |
| Contract Number: |
N00014-86-C-0595 |
| Report Number: |
A039352 |
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Keywords relating to this report:
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